Search results for "Quantum wells"
showing 10 items of 11 documents
Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors
2004
We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of op…
Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure an…
2010
WOS: 000280235800010
Electron spectra in double quantum wells of different shapes
2022
We suggest a method for calculating electronic spectra in ordered and disordered semiconductor structures (superlattices) forming double quantum wells (QW). In our method, we represent the solution of Schr\"odinger equation for QW potential with the help of the solution of the corresponding diffusion equation. This is because the diffusion is the mechanism, which is primarily responsible for amorphization (disordering) of the QW structure, leading to so-called interface mixing. We show that the electron spectrum in such a structure depends on the shape of the quantum well, which, in turn, corresponds to an ordered or disordered structure. Namely, in a disordered substance, QW typically has …
Entanglement dynamics of two independent cavity-embedded quantum dots
2010
We investigate the dynamical behavior of entanglement in a system made by two solid-state emitters, as two quantum dots, embedded in two separated micro-cavities. In these solid-state systems, in addition to the coupling with the cavity mode, the emitter is coupled to a continuum of leaky modes providing additional losses and it is also subject to a phonon-induced pure dephasing mechanism. We model this physical configuration as a multipartite system composed by two independent parts each containing a qubit embedded in a single-mode cavity, exposed to cavity losses, spontaneous emission and pure dephasing. We study the time evolution of entanglement of this multipartite open system finally …
Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
2006
We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.
Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions
2007
Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice-matched to GaN and no cracks appear in the structure. At very low indium concentration (similar to 2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium-free structures. Different mechanisms of strain relaxation in pure and 2% indium-doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 urn for AlN/GaN MQWs, and 3 mu n f…
Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures
2002
5 páginas, 4 figuras.
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
2007
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.
Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells
2003
3 páginas, 1 figura.-- Comunicación presentada al Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002.